Factory Lead Time  

12 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

230W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 150μA

Current - Continuous Drain (Id) @ 25℃  

97A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2008

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

9MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

IRFS4410

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

9m Ω @ 58A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4820pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

120nC @ 10V

Rise Time  

52ns

Vgs (Max)  

±20V

Fall Time (Typ)  

57 ns

Continuous Drain Current (ID)  

97A

Drain to Source Breakdown Voltage  

100V

Avalanche Energy Rating (Eas)  

242 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free